AOTF450L 200v, 5.8a n-channel mosfet v ds 250v@150 i d (at v gs =10v) 5.8a r ds(on) (at v gs =10v) < 0.7 w symbol v ds v units the AOTF450L is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. drain-source voltage parameter absolute maximum ratings t a =25c unless otherwise noted max 200 g d s v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q jc * drain current limited by maximum junction temperature. 5.6 max mj c 0.18 65 units c/w 108 c maximum junction-to-case mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 54 single pulsed avalanche energy g 27 5 v a 1.9 12 a v 30 gate-source voltage 4.1* continuous drain current t c =25c -55 to 175 i d t c =100c junction and storage temperature range p d t c =25c repetitive avalanche energy c drain-source voltage 200 5.8* maximum junction-to-ambient a,d power dissipation b pulsed drain current c thermal characteristics 300 w w/ o c avalanche current c v/ns g d s www.freescale.net.cn 1/5 general description features
symbol min typ max units 200 250 bv dss / ? tj 0.25 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.6 4.2 4.5 v r ds(on) 0.57 0.7 w g fs 3.4 s v sd 0.78 1 v i s maximum body-diode continuous current 5.8 a i sm 12 a c iss 150 194 235 pf c oss 25 40 55 pf c rss 3.3 pf r g 1.8 3.6 5.4 w q g 2.8 3.6 4.4 nc q gs 1.7 nc q gd 0.6 nc t d(on) 11 ns t r 20 ns t d(off) 13 ns static drain-source on-resistance v gs =10v, i d =2.9a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =2.9a forward transconductance i dss zero gate voltage drain current v ds =200v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss id=250 a, vgs=0v gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =160v, i d =5.8a gate source charge turn-on rise time gate drain charge maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =100v, i d =5.8a, r g =25 w diode forward voltage m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c v ds =5v, i d =250 m a v ds =160v, t j =125c zero gate voltage drain current t d(off) 13 ns t f 8 ns t rr 95 121 150 ns q rr 0.40 0.51 0.62 m c body diode reverse recovery time i f =5.8a,di/dt=100a/ m s,v ds =100v turn-off fall time body diode reverse recovery charge i f =5.8a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. l=60mh, i as =1.9a, v dd =150v, r g =25 ? , starting t j =25 c www.freescale.net.cn 2/5 AOTF450L 200v, 5.8a n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 3.5 4 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2.9a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 3.5 4 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2.9a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5:break down vs. junction temparature www.freescale.net.cn 3/5 AOTF450L 200v, 5.8a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =160v i d =5.8a 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF450L (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 0 2 4 6 8 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 9: current de - rating (note b) 1s 0 3 6 9 12 15 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =160v i d =5.8a 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF450L (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 0 2 4 6 8 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 9: current de-rating (note b) 1s 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOTF450L (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =5.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 4/5 AOTF450L 200v, 5.8a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id rg dut - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 5/5 AOTF450L 200v, 5.8a n-channel mosfet
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